PART |
Description |
Maker |
HYS72D32501HR-7-C |
256MB - 2GB, 184pin
|
Infineon
|
NT256D64S88A2GM NT256D64S88A2GM-7K NT256D64S88A2GM |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM 200pin One Bank Unbuffered DDR SO-DIMM 200pin一个银行缓冲的DDR SO - DIMM插槽
|
NANYA ETC Electronic Theatre Controls, Inc.
|
W3EG2128M72AFSR265D3XG |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA 2GB 2x128Mx72 ECC的DDR SDRAM的注册,瓦特/锁相环,FBGA封装
|
Murata Manufacturing Co., Ltd.
|
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3 256Mb (32M x 8) PC133 3-3-3 256Mb (32M x 8) PC100 2-2-2 56Mb的(32M的8)PC100-2-2 x16 SDRAM x16内存
|
Toshiba, Corp. SIEMENS AG
|
TS2GJFV15 |
2GB USB2.0 JetFlash垄芒V15 2GB USB2.0 JetFlash?V15
|
Transcend Information. Inc.
|
TS2GJF2A |
2GB USB2.0 JetFlash垄莽2A 2GB USB2.0 JetFlash?2A
|
Transcend Information. Inc.
|
ADECB1608 |
DDR SDRAM 200pin DIMM
|
A-Data Technology
|
KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2 From old datasheet system 1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
TS2GJFV90P |
2GB USB2.0 JetFlash㈢ V90P 2GB USB2.0 JetFlash V90P
|
ETC Transcend Information. Inc.
|
M470L1713BT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
M470L1713CT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|